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2MBI600U2E-060 参数 Datasheet PDF下载

2MBI600U2E-060图片预览
型号: 2MBI600U2E-060
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块 [IGBT Module]
分类和应用: 双极性晶体管
文件页数/大小: 4 页 / 73 K
品牌: FUJI [ FUJI ELECTRIC ]
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2MBI600U2E-060
IGBT Module U-Series
Features
· High speed switching
· Voltage drive
· Low inductance module structure
600V / 600A 2 in one-package
2. Equivalent circuit
Equivalent Circuit Schematic
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
V
CES
V
GES
I
C
I
C
p
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
iso
Conditions
Rating
650
±20
600
1200
600
1200
2400
+150
-40 to +125
2500
3.5
4.5
Unit
V
V
A
Continuous
1ms
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
Mounting *
2
Terminals *
2
1 device
W
°C
VAC
N·m
AC:1min.
*
1 :
All terminals should be connected together when isolation test will be done.
*
2 :
Recommendable value : Mounting 2.5 to 3.5N·m(M5 or M6), Terminal 3.5 to 4.5 N·m(M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
(terminal)
V
CE(sat)
(chip)
Input capacitance
Turn-on time
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
(terminal)
V
F
(chip)
t
rr
R lead
Conditions
V
GE
=0V, V
CE
=600V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=600mA
V
GE
=15V, I
C
=600A Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=10V, V
GE
=0V, f=1MHz
V
CC
=300V
I
C
=600A
V
GE
=±15V
R
G
= 4.7
V
GE
=0V
I
F
=600A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
I
F
=600A
Characteristics
Min.
Typ.
6.2
6.7
2.15
2.40
1.85
2.10
43
0.40
0.22
0.16
0.48
0.07
1.90
1.95
1.60
1.65
0.45
Unit
Max.
3.0
600
7.7
2.45
1.20
0.60
1.20
0.45
2.30
0.35
nF
µs
mA
nA
V
V
Turn-off time
Forward on voltage
V
Reverse recovery time
Lead resistance, terminal-chip*
3
µs
mΩ
*
3
:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance
Contact Thermal resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)*
4
Conditions
IGBT
FWD
With thermal compound
Characteristics
Min.
Typ.
0.0167
Unit
Max.
0.052
0.086
°C/W
°C/W
°C/W
*
4
: This is the value which is defined mounting on the additional cooling fin with thermal compound.