Switching time vs. RG
Dynamic input characteristics
Tj=25°C
VCC=300V, IC=75A, VGE=±15V, Tj=25°C
500
400
300
200
100
0
25
20
15
10
5
VCC=200V
300V
ton
toff
1000
100
10
400V
tr
tf
0
10
100
0
100
200
300
400
Gate charge : QG [nC]
Gate resistance : RG [W]
Forward current vs. Forward voltage
VGE=OV
Reverse recovery characteristics
trr , Irr vs. IF
175
150
125
100
75
Tj=125°C 25°C
trr 125°C
100
trr 25°C
Irr 125°C
Irr 25°C
50
10
25
0
0
1
2
3
4
0
25
50
75
100
125
Forward voltage : VF [V]
Forward current : IF [A]
Reversed biased safe operating area
Transient thermal resistance
+VGE=15V, -VGE<15V, Tj<125°C, RG>33W
700
600
500
400
300
200
100
0
Diode
1
IGBT
SCSOA
(non-repetitive pulse)
0,1
RBSOA (Repetitive pulse)
0
100
200
300
400
500
600
0,001
0,01
0,1
1
Pulse width : PW [sec]
Collector-Emitter voltage : VCE [V]
FUJI [ FUJI ELECTRIC ]
