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2SJ314-01S 参数 Datasheet PDF下载

2SJ314-01S图片预览
型号: 2SJ314-01S
PDF下载: 下载PDF文件 查看货源
内容描述: P-沟道硅功率MOSFET [P-CHANNEL SILICON POWER MOSFET]
分类和应用:
文件页数/大小: 3 页 / 147 K
品牌: FUJI [ FUJI ELECTRIC ]
 浏览型号2SJ314-01S的Datasheet PDF文件第2页浏览型号2SJ314-01S的Datasheet PDF文件第3页  
2SJ314-01L,S
P-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High forward Transconductance
Avalanche-proof
FUJI POWER MOSFET
FAP-III SERIES
K-Pack(S)
Outline Drawings
K-Pack(L)
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
L-type
EIAJ
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Drain-gate voltage (R
GS
=20k
Ω
)
Continuous drain current
Pulsed drain current
Gate-source voltage
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
V
DGR
I
D
I
D(puls]
V
GS
P
D
T
ch
T
stg
Rating
-60
-60
-5
-20
±20
20
+150
-55 to +150
Unit
V
A
A
A
V
W
°C
°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
(t
on
=t
d(on)
+t
r
)
Turn-off time t
off
(t
off
=t
d(off)
+t
f
)
Avalanche capability
Continuous reverse drain current
Pulsed reverse drain current
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
I
DR
I
DRM
V
SD
t
rr
Q
rr
Test Conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS
=V
GS
V
DS
= -60V
V
GS
=0V
V
GS
=±20V V
DS
=0V
I
D
= -2.5A
I
D
=2.5A V
DS
= -25V
V
DS
= -25V
V
GS
=0V
f=1MHz
V
CC
= -30V R
G
=25
Ω
I
D
= -3A
V
GS
= -10V
L=100
μ
H
T
c
=25°C
T
c
=25°C
T
ch
=25°C
Min.
-60
-1.0
T
ch
=25°C
T
ch
=125°C
V
GS
= -4V
V
GS
= -10V
2.0
Typ.
-1.5
-10
-0.2
10
280
200
4.5
500
200
120
15
20
100
80
Max.
-2.5
-500
-1.0
100
480
300
750
300
180
23
30
150
120
-5
-20
Units
V
V
μA
mA
nA
S
pF
ns
-5
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
-4.0
80
0.18
A
A
A
V
ns
μC
Thermal characteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Min.
Typ.
Max.
6.25
125.0
Units
°C/W
°C/W
1