2SK1277
F-V Series
> Features
- Include Fast Recovery Diode
- High Voltage
- Low Driving Power
N-channel MOS-FET
250V
0,12Ω
30A
150W
> Outline Drawing
> Applications
- Motor Control
- Inverters
- Choppers
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Continous Reverse Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
I
DR
V
GS
P
D
T
ch
T
stg
Rating
250
30
120
30
±20
150
150
-55 ~ +150
Unit
V
A
A
A
V
W
°C
°C
> Equivalent Circuit
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Diode Forward On-Voltage
Reverse Recovery Time
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
V
t
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
SD
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=10mA
V
DS=
V
GS
V
DS
=250V
T
ch
=25°C
V
GS
=0V
V
GS
=±20V
V
DS
=0V
I
D
=15A
V
GS
=10V
I
D
=15A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=150V
I
D
=30A
V
GS
=10V
R
GS
=25
Ω
I
F
=I
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
Min.
250
2,1
Typ.
3,0
10
10
0,09
20
2400
500
280
35
140
420
180
0,9
100
Max.
4,0
500
100
0,12
3600
750
420
50
210
630
270
1,8
150
Unit
V
V
µA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
10
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
35
0,83
Unit
°C/W
°C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
FUJI [ FUJI ELECTRIC ]
