2SK1278
F-V Series
> Features
- Include Fast Recovery Diode
- High Voltage
- Low Driving Power
N-channel MOS-FET
500V
1,1Ω
10A
100W
> Outline Drawing
> Applications
- Motor Control
- Inverters
- Choppers
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Continous Reverse Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
I
DR
V
GS
P
D
T
ch
T
stg
Rating
500
10
40
10
±20
100
150
-55 ~ +150
Unit
V
A
A
A
V
W
°C
°C
> Equivalent Circuit
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Diode Forward On-Voltage
Reverse Recovery Time
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
V
t
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
SD
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=10mA
V
DS=
V
GS
V
DS
=500V
T
ch
=25°C
V
GS
=0V
V
GS
=±20V
V
DS
=0V
I
D
=5A
V
GS
=10V
I
D
=5A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V
I
D
=10A
V
GS
=10V
R
GS
=25
Ω
I
F
=I
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
Min.
500
2,1
Typ.
3,0
10
10
0,8
8
1100
140
75
25
60
200
90
0,95
150
Max.
4,0
500
100
1,1
1600
210
110
40
90
300
140
1,8
200
Unit
V
V
µA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
4
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
35
1,25
Unit
°C/W
°C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
FUJI [ FUJI ELECTRIC ]
