2SK1940-01 参数 Datasheet PDF下载

2SK1940-01

FAP-IIA Series

> Features

-

-

-

-

-

-

-

High Speed Switching

Low On-Resistance

No Secondary Breakdown

Low Driving Power

High Voltage

V

GS

= ± 30V Guarantee

Avalanche Proof

N-channel MOS-FET

600V

0,75Ω

12A

125W

> Outline Drawing

> Applications

-

-

-

-

Switching Regulators

UPS

DC-DC converters

General Purpose Power Amplifier

> Maximum Ratings and Characteristics

- Absolute Maximum Ratings (T

C

=25°C),

unless otherwise specified

Item

Drain-Source-Voltage

Drain-Gate-Voltage (R

GS

=20KΩ)

Continous Drain Current

Pulsed Drain Current

Gate-Source-Voltage

Max. Power Dissipation

Operating and Storage Temperature Range

Symbol

V

DS

V

DGR

I

D

I

D(puls)

V

GS

P

D

T

ch

T

stg

Rating

600

600

12

48

±30

125

150

-55 ~ +150

Unit

V

V

A

A

V

W

°C

°C

> Equivalent Circuit

- Electrical Characteristics (T

C

=25°C),

unless otherwise specified

Item

Drain-Source Breakdown-Voltage

Gate Threshhold Voltage

Zero Gate Voltage Drain Current

Gate Source Leakage Current

Drain Source On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On-Time t

on

(t

on

=t

d(on)

+t

r

)

Turn-Off-Time t

off

(t

on

=t

d(off)

+t

f

)

Avalanche Capability

Continous Reverse Drain Current

Pulsed Reverse Drain Current

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

Symbol

V

(BR)DSS

V

GS(th)

I

DSS

I

R

g

C

C

C

t

t

t

t

I

I

I

V

t

Q

GSS

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

AV

DR

DRM

SD

rr

rr

Test conditions

I

D

=1mA

V

GS

=0V

I

D

=1mA

V

DS=

V

GS

V

DS

=600V

T

ch

=25°C

V

GS

=0V

T

ch

=125°C

V

GS

=±30V

V

DS

=0V

I

D

=6A

V

GS

=10V

I

D

=6A

V

DS

=25V

V

DS

=25V

V

GS

=0V

f=1MHz

V

CC

=300V

I

D

=6A

V

GS

=10V

R

GS

=10

Ω

T

ch

=25°C

L = 100µH

Min.

600

2,5

Typ.

3,0

10

0,2

10

0,55

12

2500

220

50

30

60

140

80

Max.

3,5

500

1,0

100

0,75

3800

330

75

45

90

210

120

12

48

1,58

6

12

I

F

=2xI

DR

V

GS

=0V T

ch

=25°C

I

F

=I

DR

V

GS

=0V

-dI

F

/dt=100A/µs T

ch

=25°C

1,05

450

3

Unit

V

V

µA

mA

nA

Ω

S

pF

pF

pF

ns

ns

ns

ns

A

A

A

V

ns

µC

- Thermal Characteristics

Item

Thermal Resistance

Symbol

R

th(ch-a)

R

th(ch-c)

Test conditions

channel to air

channel to case

Min.

Typ.

Max.

35

1,25

Unit

°C/W

°C/W

Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com