N-channel MOS-FET
1000V
3,6Ω
2SK1986-01
FAP-IIA Series
Drain-Source-On-State Resistance vs. T
ch
Typical Transfer Characteristics
4A
80W
> Characteristics
Typical Output Characteristics
↑
I
D
[A]
1
↑
R
DS(ON)
[Ω]
2
↑
I
D
[A]
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
↑
R
DS(ON)
[Ω]
4
↑
g
fs
[S]
5
↑
V
GS(th)
[V]
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitance vs. V
DS
Typical Input Charge
Forward Characteristics of Reverse Diode
↑
C [nF]
7
↑
V
DS
[V]
8
↑
V
GS
[V]
↑
I
F
[A]
9
V
DS
[V]
→
Q
g
[nC]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
Safe operation area
↑
Z
th(ch-c)
[K/W]
Transient Thermal impedance
↑
P
D
[W]
10
↑
I
D
[A]
12
11
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
FUJI [ FUJI ELECTRIC ]
