2SK2018 参数 Datasheet PDF下载

2SK2018-01L,S

FAP-III Series

> Features

-

-

-

-

-

-

High Current

Low On-Resistance

No Secondary Breakdown

Low Driving Power

High Forward Transconductance

Avalanche Proof

N-channel MOS-FET

60V

0,1Ω

10A

20W

> Outline Drawing

> Applications

- Motor Control

- General Purpose Power Amplifier

- DC-DC converters

> Maximum Ratings and Characteristics

- Absolute Maximum Ratings (T

C

=25°C),

unless otherwise specified

Item

Drain-Source-Voltage

Drain-Gate-Voltage(R

GS

=20KΩ)

Continous Drain Current

Pulsed Drain Current

Gate-Source-Voltage

Max. Power Dissipation

Operating and Storage Temperature Range

Symbol

V

DS

V

DGR

I

D

I

D(puls)

V

GS

P

D

T

ch

T

stg

Rating

60

60

10

40

±20

20

150

-55 ~ +150

Unit

V

V

A

A

V

W

°C

°C

> Equivalent Circuit

- Electrical Characteristics (T

C

=25°C),

unless otherwise specified

Item

Drain-Source Breakdown-Voltage

Gate Threshhold Voltage

Zero Gate Voltage Drain Current

Gate Source Leakage Current

Drain Source On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On-Time t

on

(t

on

=t

d(on)

+t

r

)

Turn-Off-Time t

off

(t

on

=t

d(off)

+t

f

)

Avalanche Capability

Continous Reverse Drain Current

Pulsed Reverse Drain Current

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

- Thermal Characteristics

Item

Thermal Resistance

Symbol

V

(BR)DSS

V

GS(th)

I

DSS

I

R

g

C

C

C

t

t

t

t

I

I

I

V

t

Q

GSS

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

AV

DR

DRM

SD

rr

rr

Test conditions

I

D

=1mA

V

GS

=0V

I

D

=1mA

V

DS=

V

GS

V

DS

=60V

T

ch

=25°C

V

GS

=0V

T

ch

=125°C

V

GS

=±20V

V

DS

=0V

I

D

=5A

V

GS

=4V

I

D

=5A

V

GS

=10V

I

D

=5A

V

DS

=25V

V

DS

=25V

V

GS

=0V

f=1MHz

V

CC

=30V

I

D

=5A

V

GS

=10V

R

GS

=25Ω

T

ch

=25°C

L=100µH

Min.

60

1,0

Typ.

1,5

10

0,2

10

0,11

0,07

8

500

200

80

10

20

100

50

Max.

2,5

500

1,0

100

0,16

0,1

750

300

120

15

30

150

75

10

40

4

10

I

F

=2xI

DR

V

GS

=0V T

ch

=25°C

I

F

=I

DR

V

GS

=0V

-dI

F

/dt=100A/µs T

ch

=25°C

1,2

100

0,15

Unit

V

V

µA

mA

nA

Ω

Ω

S

pF

pF

pF

ns

ns

ns

ns

A

A

A

V

ns

µC

Symbol

R

th(ch-a)

R

th(ch-c)

Test conditions

channel to air

channel to case

Min.

Typ.

Max.

6,25

Unit

°C/W

°C/W

Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com