2SK2098 参数 Datasheet PDF下载

2SK2098-01MR

FAP-III Series

> Features

-

-

-

-

-

-

High Current

Low On-Resistance

No Secondary Breakdown

Low Driving Power

High Forward Transconductance

Avalanche Proof

N-channel MOS-FET

150V

0,08Ω

20A

50W

> Outline Drawing

> Applications

- Motor Control

- General Purpose Power Amplifier

- DC-DC converters

> Maximum Ratings and Characteristics

- Absolute Maximum Ratings (T

C

=25°C),

unless otherwise specified

Item

Drain-Source-Voltage

Drain-Gate-Voltage (R

GS

=20KΩ)

Continous Drain Current

Pulsed Drain Current

Gate-Source-Voltage

Max. Power Dissipation

Operating and Storage Temperature Range

Symbol

V

DS

V

DGR

I

D

I

D(puls)

V

GS

P

D

T

ch

T

stg

Rating

150

150

20

80

±20

50

150

-55 ~ +150

Unit

V

V

A

A

V

W

°C

°C

> Equivalent Circuit

- Electrical Characteristics (T

C

=25°C),

unless otherwise specified

Item

Drain-Source Breakdown-Voltage

Gate Threshhold Voltage

Zero Gate Voltage Drain Current

Gate Source Leakage Current

Drain Source On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On-Time t

on

(t

on

=t

d(on)

+t

r

)

Turn-Off-Time t

off

(t

on

=t

d(off)

+t

f

)

Avalanche Capability

Continous Reverse Drain Current

Pulsed Reverse Drain Current

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

- Thermal Characteristics

Item

Thermal Resistance

Symbol

V

(BR)DSS

V

GS(th)

I

DSS

I

R

g

C

C

C

t

t

t

t

I

I

I

V

t

Q

GSS

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

AV

DR

DRM

SD

rr

rr

Test conditions

I

D

=1mA

V

GS

=0V

I

D

=1mA

V

DS=

V

GS

V

DS

=150V

T

ch

=25°C

V

GS

=0V

T

ch

=125°C

V

GS

=±20V

V

DS

=0V

I

D

=10A

V

GS

=4V

I

D

=10A

V

GS

=10V

I

D

=10A

V

DS

=25V

V

DS

=25V

V

GS

=0V

f=1MHz

V

CC

=30V

I

D

=20A

V

GS

=10V

R

GS

=25Ω

T

ch

=25°C

L = 100µH

Min.

150

1,0

Typ.

1,5

10

0,2

10

0,065

0,055

20

2300

330

150

15

20

450

100

Max.

2,5

500

1,0

100

0,1

0,08

3450

500

230

25

30

700

150

20

80

1,50

10

20

I

F

=2xI

DR

V

GS

=0V T

ch

=25°C

I

F

=I

DR

V

GS

=0V

-dI

F

/dt=100A/µs T

ch

=25°C

1,0

125

0,6

Unit

V

V

µA

mA

nA

Ω

Ω

S

pF

pF

pF

ns

ns

ns

ns

A

A

A

V

ns

µC

Symbol

R

th(ch-a)

R

th(ch-c)

Test conditions

channel to air

channel to case

Min.

Typ.

Max.

62,5

2,5

Unit

°C/W

°C/W

FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56