2SK2099-01S 参数 Datasheet PDF下载

2SK2099-01L,S

FAP-IIA Series

> Features

-

-

-

-

-

-

-

High Speed Switching

Low On-Resistance

No Secondary Breakdown

Low Driving Power

High Voltage

V

GS

= ± 30V Guarantee

Avalanche Proof

N-channel MOS-FET

250V

0,85Ω

6A

20W

> Outline Drawing

> Applications

-

-

-

-

Switching Regulators

UPS

DC-DC converters

General Purpose Power Amplifier

> Maximum Ratings and Characteristics

- Absolute Maximum Ratings (T

C

=25°C),

unless otherwise specified

Item

Drain-Source-Voltage

Drain-Gate-Voltage (R

GS

=20KΩ)

Continous Drain Current

Pulsed Drain Current

Gate-Source-Voltage

Max. Power Dissipation

Operating and Storage Temperature Range

Symbol

V

DS

V

DGR

I

D

I

D(puls)

V

GS

P

D

T

ch

T

stg

Rating

250

250

6

24

±30

20

150

-55 ~ +150

Unit

V

V

A

A

V

W

°C

°C

> Equivalent Circuit

- Electrical Characteristics (T

C

=25°C),

unless otherwise specified

Item

Drain-Source Breakdown-Voltage

Gate Threshhold Voltage

Zero Gate Voltage Drain Current

Gate Source Leakage Current

Drain Source On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On-Time t

on

(t

on

=t

d(on)

+t

r

)

Turn-Off-Time t

off

(t

on

=t

d(off)

+t

f

)

Avalanche Capability

Continous Reverse Drain Current

Pulsed Reverse Drain Current

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

Symbol

V

(BR)DSS

V

GS(th)

I

DSS

I

R

g

C

C

C

t

t

t

t

I

I

I

V

t

Q

GSS

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

AV

DR

DRM

SD

rr

rr

Test conditions

I

D

=1mA

V

GS

=0V

I

D

=1mA

V

DS=

V

GS

V

DS

=250V

T

ch

=25°C

V

GS

=0V

T

ch

=125°C

V

GS

=±30V

V

DS

=0V

I

D

=3A

V

GS

=10V

I

D

=3A

V

DS

=25V

V

DS

=25V

V

GS

=0V

f=1MHz

V

CC

=150V

I

D

=6A

V

GS

=10V

R

GS

=10

Ω

T

ch

=25°C

L = 100µH

Min.

250

2,5

Typ.

3,0

10

0,2

10

0,6

3,0

400

75

20

20

20

40

10

Max.

3,5

500

1,0

100

0,85

600

110

30

30

30

60

15

6

24

1,5

1,5

6

I

F

=2xI

DR

V

GS

=0V T

ch

=25°C

I

F

=I

DR

V

GS

=0V

-dI

F

/dt=100A/µs T

ch

=25°C

1,0

120

0,6

Unit

V

V

µA

mA

nA

Ω

S

pF

pF

pF

ns

ns

ns

ns

A

A

A

V

ns

µC

- Thermal Characteristics

Item

Thermal Resistance

Symbol

R

th(ch-a)

R

th(ch-c)

Test conditions

channel to air

channel to case

Min.

Typ.

Max.

6,25

Unit

°C/W

°C/W

Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com