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2SK2292-01S 参数 Datasheet PDF下载

2SK2292-01S图片预览
型号: 2SK2292-01S
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOS - FET的 [N-channel MOS-FET]
分类和应用:
文件页数/大小: 2 页 / 90 K
品牌: FUJI [ FUJI ELECTRIC ]
 浏览型号2SK2292-01S的Datasheet PDF文件第2页  
2SK2292-01L,S
FAP-IIA Series
> Features
-
-
-
-
-
-
-
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
V
GS
= ± 30V Guarantee
Avalanche Proof
N-channel MOS-FET
250V
1,1Ω
4A
20W
> Outline Drawing
> Applications
-
-
-
-
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate-Voltage (R
GS
=20KΩ)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
V
DGR
I
D
I
D(puls)
V
GS
P
D
T
ch
T
stg
Rating
250
250
4
16
±30
20
150
-55 ~ +150
Unit
V
V
A
A
V
W
°C
°C
> Equivalent Circuit
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Continous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
I
I
I
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
DR
DRM
SD
rr
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS=
V
GS
V
DS
=250V
T
ch
=25°C
V
GS
=0V
T
ch
=125°C
V
GS
=±30V
V
DS
=0V
I
D
=2,0A
V
GS
=10V
I
D
=2,0A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=150V
I
D
=4A
V
GS
=10V
R
GS
=10
T
ch
=25°C
L = 100µH
Min.
250
2,5
Typ.
3,0
10
0,2
10
0,8
2,0
230
70
45
10
20
25
10
Max.
3,5
500
1,0
100
1,1
350
110
70
15
30
40
15
4
8
1,5
1,0
4
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
1,0
110
0,5
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
62,5
Unit
°C/W
°C/W