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2SK2690 参数 Datasheet PDF下载

2SK2690图片预览
型号: 2SK2690
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOS - FET的 [N-channel MOS-FET]
分类和应用:
文件页数/大小: 3 页 / 343 K
品牌: FUJI [ FUJI ELECTRIC ]
 浏览型号2SK2690的Datasheet PDF文件第2页浏览型号2SK2690的Datasheet PDF文件第3页  
2SK2690-01
FAP-IIIB Series
> Features
-
-
-
-
-
High Current
Low On-Resistance
No Secondary Breakdown
Low Driving Power
Avalanche Rated
N-channel MOS-FET
60V
0,01Ω
80A
125W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
V
GS
E
AV
P
D
T
ch
T
stg
Rating
60
80
320
±20
599
125
150
-55 ~ +150
* L=0,125mH, V
CC
=24V
> Equivalent Circuit
Unit
V
A
A
V
mJ*
W
°C
°C
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS=
V
GS
V
DS
=60V
T
ch
=25°C
V
GS
=0V
T
ch
=125°C
V
GS
=±20V
V
DS
=0V
I
D
=40A
V
GS
=4V
V
GS
=10V
I
D
=40A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V
I
D
=75A
V
GS
=10V
R
GS
=10
T
ch
=25°C
L = 100µH
I
F
=160A V
GS
=0V T
ch
=25°C
I
F
=80A V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
Min.
60
1,0
Typ.
1,5
10
0,2
10
0,012
0,0075
55
3500
1250
360
15
75
190
110
1,15
75
0,17
Max.
2,0
500
1,0
100
0,017
0,01
5250
1870
540
23
120
285
165
1,65
120
25
80
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
35
1,0
Unit
°C/W
°C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98