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2SK2765-01 参数 Datasheet PDF下载

2SK2765-01图片预览
型号: 2SK2765-01
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOS - FET的 [N-channel MOS-FET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 2 页 / 272 K
品牌: FUJI [ FUJI ELECTRIC ]
 浏览型号2SK2765-01的Datasheet PDF文件第2页  
2SK2765-01
FAP-IIS Series
> Features
-
-
-
-
-
-
-
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
VGS = ± 30V Guarantee
Repetitive Avalanche Rated
N-channel MOS-FET
800V
2Ω
7A
125W
> Outline Drawing
> Applications
-
-
-
-
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (T
ch
150°C)
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
V
GS
I
AR
E
AS
P
D
T
ch
T
stg
Rating
800
7
28
±30
7
267
125
150
-55 ~ +150
Unit
V
A
A
V
A
mJ
W
°C
°C
> Equivalent Circuit
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS=
V
GS
V
DS
=800V
T
ch
=25°C
V
GS
=0V
T
ch
=125°C
V
GS
=±30V
V
DS
=0V
I
D
=3,5A
V
GS
=10V
I
D
=3,5A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=600V
I
D
=7A
V
GS
=10V
R
GS
=10
T
ch
=25°C
L = 100µH
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/µs T
ch
=25°C
Min.
800
3,5
Typ.
4,0
10
0,2
10
1,62
4
900
130
70
25
80
70
40
1,0
750
8,5
Max.
4,5
500
1,0
100
2,0
7
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
35
1,0
Unit
°C/W
°C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98