2SK2907-01
FAP-IIIB Series
> Features
-
-
-
-
-
High Current
Low On-Resistance
No Secondary Breakdown
Low Driving Power
Avalanche Rated
N-channel MOS-FET
60V
0,0078Ω
±100A 125W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V
DS
I
D
I
D(puls)
V
GS
E
AV
P
D
T
ch
T
stg
Rating
60
±100
±400
±30
1268.3
125
150
-55 ~ +150
L=0.169mH,Vcc=24V
Unit
V
A
A
V
mJ*
W
°C
°C
- Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
GSS
DS(on)
Test conditions
I
D
=1mA
V
GS
=0V
I
D
=10mA
V
DS=
V
GS
V
DS
=60V
T
ch
=25°C
V
GS
=0V
T
ch
=125°C
VG
S
=±30V
V
DS
=0V
I
D
=50A
I
D
=50A
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V
V
GS
=10V
I
D
=100A
R
GS
=10
Ω
T
ch
=25°C
L = 100µH
I
F
=100A V
GS
=0V T
ch
=25°C
I
F
=50A V
GS
=0V
-dI/dt=100A/µs T
ch
=25°C
Min.
60
2,5
Typ.
3,0
10
0,2
10
5,7
55
5400
2100
550
29
200
160
150
1,0
85
0,21
Max.
3,5
500
1,0
100
7,8
8100
3150
830
50
350
240
230
1,5
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
25
100
Unit
V
V
µA
mA
nA
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
R
R
th(ch-c)
th(ch-a)
Symbol
channel to case
channel to ambient
Min.
Typ.
Max.
1,0
30,00
Unit
°C/W
°C/W
FUJI [ FUJI ELECTRIC ]
