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2SK3337-01 参数 Datasheet PDF下载

2SK3337-01图片预览
型号: 2SK3337-01
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道硅功率MOS -FET [N-CHANNEL SILICON POWER MOS-FET]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 4 页 / 94 K
品牌: FUJI [ FUJI ELECTRIC ]
 浏览型号2SK3337-01的Datasheet PDF文件第2页浏览型号2SK3337-01的Datasheet PDF文件第3页浏览型号2SK3337-01的Datasheet PDF文件第4页  
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D(puls]
V
GS
I
AR *2
E
AV *1
P
D
T
ch
T
stg
Rating
1000
±7
±28
±30
7
463
255
+150
-55 to +150
Unit
V
A
A
V
A
mJ
W
°C
°C
<
*2 Tch=150°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
*1 L=17.3mH, Vcc=100V
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total gate charge
Gate-Source charge
Gete-Drain charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=1mA
V
GS
=0V
I
D
=1mA
V
DS
=V
GS
V
DS
=1000V
V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=3.5A V
GS
=10V
I
D
=3.5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=600V I
D
=7A
V
GS
=10V
R
GS
=10
Vcc=500V
I
D
=7A
V
GS
=10V
L=17.3 mH T
ch
=25°C
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Min.
100
2.5
T
ch
=25°C
T
ch
=125°C
Typ.
Max.
Units
V
V
µA
mA
nA
S
pF
3.0
3.5
10
500
0.2
1.0
10
100
1.54
2.0
2.7
5.5
1480
2220
170
255
75
113
25
38
50
75
160
240
70
105
84
126
23
35
31
47
7
1.00
1.50
1.6
15.0
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.490
50.0
Units
°C/W
°C/W
1