2SK3469-01MR
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOSFET
200303
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation Voltage
Symbol
V
DS
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
V
ISO
Ratings
500
±14
±56
±30
14
188.2
20
5
2.16
70
+150
-55 to +150
2
Unit
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
*5
<
*1 L=1.76mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch=150°C
<
<
*3 I
F
<
D
, -di/dt=50A/µs, Vcc=BV
DSS
, Tch=150°C *4 V
DS
< 500V *5 t=60sec, f=60Hz
=-I
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=500V V
GS
=0V
T
ch
=25°C
V
DS
=400V V
GS
=0V
T
ch
=125°C
V
GS
=±30V V
DS
=0V
I
D
=6A V
GS
=10V
I
D
=6A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=6A
V
GS
=10V
R
GS
=10
Ω
V
CC
=250V
I
D
=12A
V
GS
=10V
L=1.76mH T
ch
=25°C
I
F
=12A V
GS
=0V T
ch
=25°C
I
F
=12A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Min.
500
3.0
Typ.
Max.
5.0
25
250
100
0.52
Units
V
V
µA
nA
Ω
S
pF
10
0.40
5.5
11
1200
1800
140
210
6.0
9.0
17
26
15
23
34
51
7
11
30
45
10
15
11
16.5
14
1.00
1.50
0.7
4.5
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.79
58.0
Units
°C/W
°C/W
1
FUJI [ FUJI ELECTRIC ]
