2SK3522-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol
Ratings
Unit
V
V
DS
500
V
V
DSX *5
500
A
Continuous drain current
I
D
±21
A
Pulsed drain current
I
D(puls]
±84
V
Gate-source voltage
V
GS
±30
A
Repetitive or non-repetitive
I
AR
*2
21
mJ
Maximum Avalanche Energy
E
AS
*1
400
kV/µs
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
kV/µs
°C
Max. power dissipation
P
D
Ta=25
2.50
W
°C
Tc=25
220
Operating and storage
T
ch
+150
°C
-55 to +150
temperature range
T
stg
°C
*1 L=1.67mH, Vcc=50V *2 Tch <150°C *3 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C
=
=
=
=
*4 VDS< 500V *5 V
GS
=-30V
=
Item
Drain-source voltage
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
µA
I
D
= 250
V
DS
=V
GS
V
DS
=500V V
GS
=0V
V
DS
=400V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=10.5A V
GS
=10V
I
D
=10.5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=10.5A
V
GS
=10V
R
GS
=10
Ω
V
CC
=300V
I
D
=21A
V
GS
=10V
L=1.67mH T
ch
=25°C
I
F
=21A V
GS
=0V T
ch
=25°C
I
F
=21A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
T
ch
=25°C
T
ch
=125°C
Min.
500
3.0
Typ.
Max.
5.0
25
250
100
0.26
Units
V
V
µA
nA
Ω
S
pF
11
10
0.20
22
2280
3420
320
480
16
24
27
41
37
56
75
113
11
17
54
81
16
24
20
30
0.98
0.7
10.0
ns
nC
21
1.50
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.568
50.0
Units
°C/W
°C/W
1
FUJI [ FUJI ELECTRIC ]
