6MBI35S-120
IGBT Modules
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V,V
GE=
±15V, Rg=33Ω,Tj=25
o
C
1000
1000
Vcc=600V,V
GE=
±15V, Rg=33Ω,Tj=125
o
C
toff
500
toff
Switching time : ton, tr, toff, tf [ nsec ]
500
Switching time : ton, tr, toff, tf [ nsec ]
ton
ton
tr
tr
tf
100
100
tf
50
0
20
40
60
Collector current : Ic [ A ]
50
0
20
40
60
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V,Ic=35A,V
GE=
±15V, Tj=25
o
C
5000
10
Vcc=600V,V
GE=
±15V, Rg=33Ω
Eon(125 C)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
8
o
Switching time : ton, tr, toff, tf [ nsec ]
1000
6
Eon(25 C)
o
500
toff
4
Eoff(125 C)
o
ton
tr
100
tf
50
10
50
100
Ω
]
Eoff(25o)C
2
o
Err(125 C)
Err(25 C)
o
0
500
0
20
40
60
Gate resistance : Rg [
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area
100
Eon
Vcc=600V,Ic=35A,V
GE=
±15V,Tj=125 C
25
o
+VGE=15V, -VGE<15V, Rg>33Ω,Tj<125
o
C
=
=
=
20
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
80
15
Collector current : Ic [ A ]
Eoff
Err
10
50
100
Ω
]
60
10
40
5
20
0
500
Gate resistance : Rg [
0
0
200
400
600
800
1000
1200
1400
Collector - Emitter voltage : VCE [ V ]
FUJI [ FUJI ELECTRIC ]
