Collector current vs. Collector-Emitter voltage (typ.)
Tj=25oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125oC / chip
200
150
100
50
200
150
100
50
VGE=20V 15V
12V
VGE=20V 15V
12V
10V
8V
10V
8V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
200
150
100
50
10
8
Tj=25oC
Tj=125oC
6
4
Ic=150A
Ic=75A
2
Ic=37.5A
0
0
0
1
2
3
4
5
5
10
15
20
25
Collector-Emitter voltage : VCE [ V ]
Gate-Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25oC
Dynamic Gate charge (typ.)
Tj=25oC
Vcc=600V, Ic=75A,
100.0
10.0
1.0
VGE
Cies
Cres
Coes
VCE
0
0.1
0
100
200
300
400
0
10
20
30
Collector-Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
9
MS5F6027
13
H04-004-03a
FUJI [ FUJI ELECTRIC ]
