7MBP25RA120
IGBT-IPM R series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· Compatible with existing IPM-N series packages
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
1200V / 25A 7 in one-package
Maximum ratings and characteristics
Absolute maximum ratings(at
Tc=25°C unless otherwise specified)
Item
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current
DC
1ms
DC
DB
Collector power dissipation
Collector current
Forward current of Diode
Collector power dissipation
One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
One transistor
Symbol
V
DC
V
DC(surge)
V
SC
V
CES
V
R
I
C
I
CP
-I
C
P
C
I
C
I
CP
I
F
P
C
T
j
V
CC
Rating
Min.
0
0
200
0
-
-
-
-
-
-
-
-
-
-
0
0
-
0
-
-40
-20
-
-
-
Max.
900
1000
800
1200
1200
25
50
25
198
15
30
15
120
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *
6
3.5 *
6
Unit
V
V
V
V
V
A
A
A
W
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
DC
1ms
*1
V
in *2
I
in
V
ALM *3
I
ALM
T
stg
T
op
*4
Fig.1 Measurement of case temperature
Isolating voltage (Case-Terminal)
V
iso
Screw torque
Mounting (M5)
Terminal (M5)
*5
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply V
ALM
between terminal No. 16 and 10.
*4 Apply I
ALM
to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit
(at Tc=Tj=25°C, Vcc=15V)
Item
INV
Symbol
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
Condition
Min.
Typ. Max.
V
CE
=1200V input terminal open
I
CES
Ic=25A
V
CE(sat)
-Ic=25A
V
F
V
CE
=1200V input terminal open
I
CES
Ic=15A
V
CE(sat)
-Ic=15A
V
F
Unit
–
–
–
–
–
–
–
–
–
–
–
–
1.0
2.6
3.0
1.0
2.6
3.0
mA
V
V
mA
V
V
DB
FUJI [ FUJI ELECTRIC ]
