7MBP50RA120
IGBT-IPM R series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· Compatible with existing IPM-N series packages
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
1200V / 50A 7 in one-package
Maximum ratings and characteristics
Absolute maximum ratings(at
Tc=25°C unless otherwise specified)
Item
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current
DC
1ms
DC
One transistor
Symbol
V
DC
V
DC(surge)
V
SC
V
CES
V
R
I
C
I
CP
-I
C
P
C
I
C
I
CP
I
F
P
C
T
j
V
CC
Rating
Min.
0
0
200
0
-
-
-
-
-
-
-
-
-
-
Max.
900
1000
800
1200
1200
50
100
50
357
25
50
25
198
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *
6
3.5 *
6
Unit
V
V
V
V
V
A
A
A
W
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
DB
Collector power dissipation
Collector current
Forward current of Diode
DC
1ms
One transistor
Collector power dissipation
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque
Mounting (M5)
Terminal (M5)
*1
V
in *2
I
in
V
ALM *3
I
ALM
T
stg
T
op
V
iso
*4
0
0
-
0
-
-40
-20
-
-
-
Fig.1 Measurement of case temperature
*5
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply V
ALM
between terminal No. 16 and 10.
*4 Apply I
ALM
to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit
(at Tc=Tj=25°C, Vcc=15V)
Item
INV
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
Symbol
I
CES
V
CE(sat)
V
F
I
CES
V
CE(sat)
V
F
Condition
V
CE
=1200V input terminal open
Ic=50A
-Ic=50A
V
CE
=1200V input terminal open
Ic=25A
-Ic=25A
Min.
–
–
–
–
–
–
–
–
–
–
–
Typ.
Max.
1.0
2.6
3.0
1.0
2.6
3.3
Unit
mA
V
V
mA
V
V
DB
FUJI [ FUJI ELECTRIC ]
