1MBI 300S-120
IGBT MODULE ( S-Series )
I
Features
•
NPT-Technology
•
Square SC SOA at 10 x I
C
•
High Short Circuit Withstand-Capability
•
Small Temperature Dependence of the Turn-Off
Switching Loss
•
Low Losses And Soft Switching
1-Pack IGBT
1200V
1x300A
I
Outline Drawing
I
Applications
•
High Power Switching
•
A.C. Motor Controls
•
D.C. Motor Controls
•
Uninterruptible Power Supply
I
Maximum Ratings and Characteristics
•
Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Continuous
Collector
1ms
Current
Continuous
1ms
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
A.C. 1min.
*
1
Screw Torque
( T
c
=25°C
)
Symbols
V
CES
V
GES
I
C
25°C / 80°C
I
C PULSE
25°C / 80°C
-I
C
-I
C PULSE
P
C
T
j
T
stg
V
is
Mounting *
Terminals *
2
Terminals *
2
( at T
j
=25°C )
Symbols
2
I
Equivalent Circuit
Units
V
Ratings
1200
±
20
400 / 300
800 / 600
300
600
2100
+150
-40
∼
+125
2500
3.5
4.5
1.7
A
W
°C
V
Nm
Note:
1*: All Terminals should be connected together when isolation test will be done.
2*: Recommendable Value: Mounting 2.5
∼
3.5 Nm (M5) or (M6) ; Terminal 3.5
∼
4.5 Nm (M6), 1.3
∼
1.7 Nm (M4)
•
Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Time
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r,x
t
r,i
t
OFF
t
f
V
F
t
rr
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
Test Conditions
V
GE
=0V V
CE
=1200V
V
CE
=0V V
GE
=± 20V
V
GE
=20V I
C
=300mA
T
j
= 25°C
V
GE
=15V I
C
=300A
T
j
=125°C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
= 600V
I
C
= 300A
V
GE
=
±15V
R
G
= 2.7Ω
Inductive Load
I
F
=300A; V
GE
=0V
I
F
=300A
T
j
= 25°C
T
j
=125°C
Min.
Typ.
5.5
7.2
2.3
2.8
36’000
7’500
6’600
0.35
0.25
0.10
0.45
0.08
2.3
2.0
Max.
4.0
800
8.5
2.6
Units
mA
nA
V
pF
1.2
0.6
1.0
0.3
3.0
350
µs
V
ns
•
Thermal Characteristics
Items
Thermal Resistance
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
Max.
0.06
0.17
Units
°C/W
0.0125
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
