FHX04LG, 05LG, 06LG
Super Low Noise HEMT
FEATURES
• Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04)
• High Associated Gain: 10.5dB (Typ.)@f=12GHz
• Lg
≤
0.25µm, Wg = 200µm
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Packaging Available
DESCRIPTION
The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT)
intended for general purpose, low noise and high gain amplifiers in the 2-18GHz
frequency range.The devices are packaged in cost effective, low parasitic, hermetically
sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other
low noise applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
*Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
Symbol
VDS
VGS
Pt*
Tstg
Tch
Rating
3.5
-3.0
180
-65 to +175
175
Unit
V
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
FHX04LG
Associated Gain
Noise Figure
FHX05LG
Associated Gain
Noise Figure
FHX06LG
Associated Gain
Thermal Resistance
AVAILABLE CASE STYLES:
LG
Symbol
IDSS
gm
Vp
VGSO
NF
Gas
NF
Gas
NF
Gas
Rth
Condition
VDS = 2V, VGS = 0V
VDS = 2V, IDS =10mA
VDS = 2V, IDS =1mA
IGS = -10µA
Min.
15
35
-0.2
-3.0
-
9.5
-
9.5
-
9.5
-
Limit
Typ. Max.
30
60
45
-
-0.7
-
0.75
10.5
0.9
10.5
1.1
10.5
300
-1.5
-
0.85
-
1.1
-
1.35
-
400
Unit
mA
mS
V
V
dB
dB
dB
dB
dB
dB
°C/W
VDS = 2V,
IDS = 10mA,
f = 12GHz
Channel to Case
Note:
RF parameters are measured on a sample basis as follows:
Lot qty.
Sample qty.
Accept/Reject
1200
or
less
125
(0,1)
1201
to
3200
200
(0,1)
3201
to
10000
315
(1,2)
10001 or
over
500
(1,2)
Edition 1.1
July 1999
1
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
