FHX35X/002
FHX35LG/002
Low Noise HEMT
DESCRIPTION
The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT
(High Electron Mobility Transistor) ones suitable for use as the front end
of an optical receiver in high speed lightwave communication systems.
This HEMT combines high transconductance, low gate capacitance and
low leakage current; all important factors in achieving low noise
preamplification. Fujitsu’s stringent Quality Assurance criteria and
detailed Test Procedures assure Highest Reliabiltity Performance.
FEATURES
•
•
•
•
•
High Transconductance
Low Leakage Current
Low Gate Capacitance
Gold Bonding System
Proven Reliability
LG PACKAGE
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Thermal Resistance
Symbol
VDS
VGS
PT
Tstg
Tch
Rth
Channel to Case
Conditions
Ratings
6
-5
290
-65 to 175
+175
150
Unit
V
V
mW
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Leakage Current
Gate-Source Capacitance
Gate-Drain Capacitance
Symbol
IDSS
gm
Vp
IGSO
CGS
CGD
Conditions
VDS=2V, VGS=0V
VDS=2V, IDS=10mA
VDS=2V, IDS=1mA
VGS=-2V
VDS=3V
IDS=10mA
FHX35X/002
FHX35LG/002
Min.
15
45
-0.2
-
-
-
-
Limits
Min.
40
60
-1.0
10
0.27
0.47
0.035
Max.
85
-
-2.0
20
-
-
-
pF
Unit
mA
mS
V
nA
pF
VDS=3V, IDS=10mA
Edition 1.1
May 1998
1
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
