FLC257MH-8
C-Band Power GaAs FET
FEATURES
•
•
•
•
•
High Output Power: P1dB = 34.0dBm(Typ.)
High Gain: G1dB = 8.0dB(Typ.)
High PAE:
η
add = 35%(Typ.)
ProvenReliability
Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC257MH-8 is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Condition
Rating
15
-5
15
-65 to +175
175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with
gate resistance of 200Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
η
add
Rth
Channel to Case
VDS = 10V,
IDS
=
0.6 IDSS (Typ.),
f = 8.5 GHz
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS =600mA
VDS = 5V, IDS =50mA
IGS = -50µA
Min.
-
-
-1.0
-5
32.5
7.0
-
-
Limit
Typ. Max.
1000 1500
500
-2.0
-
34.0
8.0
35
8
-
-3.5
-
-
-
-
10
Unit
mA
mS
V
V
dBm
dB
%
°C/W
Power Gain at 1dB G.C.P.
Power-added Efficiency
Thermal Resistance
CASE STYLE:
MH
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
