FLL2400IU-2C
L-Band High Power GaAs FET
FEATURES
•
•
•
•
Push-Pull Configuration
High Power Output: 240W (Typ.)
Broad Frequency Range: 2100 to 2200 MHz.
Suitable for class AB operation.
DESCRIPTION
The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is well suited for use in W-CDMA and IMT 2000 base station
amplifiers as it offers high gain, long term reliability and ease of use.
APPLICATIONS
• Solid State Base-Station Power Amplifier.
• W-CDMA and IMT 2000 Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Tc = 25°C
Condition
Rating
15
-5
230
-65 to +175
+175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 367 and -161 mA respectively with
gate resistance of 1.5Ω.
3. The operating channel temperature (Tch) and case temperature (Tc) should not exceed 145°C and 80°C respectively.
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Drain Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain
Thermal Resistance
CASE STYLE: IU
Note 1: The RF test are performed using a P.W. = 1msec., Duty Cycle = 20%
Symbol
I
DSS
V
p
V
GSO
P
out
GL
R
th
Conditions
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 680mA
I
GS
= -6.8mA
VDS = 12V
f = 2.17 GHz
IDS = 6.0A
Pin = 45.0dBm
Note 1
Limits
Min. Typ. Max.
-
-0.1
-5
52.8
10.5
-
32
-0.3
-
53.8
11.5
0.45
-
-0.5
-
-
-
0.65
Unit
A
V
V
dBm
dB
°C/W
Channel to Case
Edition 1.0 Preliminary
November 2000
1
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
