FLL600IQ-2
FEATURES
•
•
•
•
•
Push-Pull Configuration
High Power Output: 60W (Typ.)
High PAE: 43% (Typ.)
Broad Frequency Range: 800 to 2000 MHz.
Suitable for class AB operation.
DESCRIPTION
The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain,
long term reliability and ease of use.
APPLICATIONS
•
Solid State Power Amplifier.
• PCS/PCN Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Tc = 25°C
Condition
Rating
15
-5
125
-65 to +175
+175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 78 and -32 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IQ
Symbol
I
DSS
gm
V
p
V
GSO
P
1dB
G
1dB
I
DSR
η
add
R
th
Channel to Case
V
DS
= 12V
f=1.96GHz
I
DS
= 4.0A
Conditions
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 14.4A
V
DS
= 5V, I
DS
= 1.44A
I
GS
= -1.44mA
Limits
Min. Typ. Max.
-
-
-1.0
-5
47.0
9.5
-
-
-
24
12
-2.0
-
48.0
10.5
11.0
43
0.8
32
-
-3.5
-
-
-
15.0
-
1.2
Unit
A
S
V
V
dBm
dB
A
%
°C/W
G.C.P.: Gain Compression Point
Edition 1.7
December 1999
1
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
