FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00001-2v0-E
Memory FRAM
16 K (2 K
×
8) Bit I
2
C
MB85RC16
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DESCRIPTION
The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words
×
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery.
The memory cells used in the MB85RC16 have at least 10
10
Read/Write operation endurance per bit, which
is a significant improvement over the number of read and write operations supported by other nonvolatile
memory products.
The MB85RC16 can provide writing in one byte units because the long writing time is not required unlike
Flash memory and E
2
PROM. Therefore, the writing completion waiting sequence like a write busy state is
not required.
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FEATURES
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Bit configuration
: 2,048 words
×
8 bits
Operating power supply voltage : 2.7 V to 3.6 V
Operating frequency
: 1 MHz (Max)
Two-wire serial interface
: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
Operating temperature range :
−
40
°C
to
+
85
°C
Data retention
: 10 years (
+
75
°C)
Read/Write endurance
: 10
10
times
Package
: Plastic / SOP, 8-pin (FPT-8P-M02)
Low power consumption
: Operating current 0.1mA (Max: @1 MHz), Standby current 0.1
μA
(Typ)
Copyright©2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2011.6
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
