FUJITSU SEMICONDUCTOR
DATA SHEET
DS05–13110–3E
Memory FRAM
128 K (16 K
×
8) Bit I
2
C
MB85RC128
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DESCRIPTION
The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration
of 16,384 words
×
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for
forming the nonvolatile memory cells.
The MB85RC128 adopts the two-wire serial interface.
Unlike SRAM, the MB85RC128 is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC128 has improved to be at
least 10
10
cycles, significantly out performing Flash memory and E
2
PROM in the number.
The MB85RC128 does not need a polling sequence after writing to the memory such as the case of Flash
memory nor E
2
PROM.
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FEATURES
•
•
•
•
Bit configuration
: 16,384 words
×
8 bits
Operating power supply voltage : 2.7 V to 3.6 V
Operating frequency
: 400 kHz (Max)
Two-wire serial interface
: I
2
C-bus specification ver. 2.1 compliant, supports Standard-mode/
Fast-mode.
Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
Operating temperature range :
−
40
°C
to +85
°C
Data retention
: 10 years (
+
75
°C)
Read/write endurance
: 10
10
times
Package
: Plastic / SOP, 8-pin (FPT-8P-M02)
Low power consumption
: Operating current 0.15 mA (Max: @400 kHz), Standby current 5
μA
(Typ)
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•
•
•
•
Copyright©2010-2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2011.6
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
