FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20880-1E
FLASH MEMORY
CMOS
16M (2M
×
8/1M
×
16) BIT
MBM29DL16XTE/BE
-70/90/12
s
FEATURES
Dual Operation
• 0.23
µm
Process Technology
• Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to Table 1)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
(Continued)
s
PRODUCT LINE UP
Part No.
V
CC
= 3.3 V
Ordering Part No.
V
CC
= 3.0 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
+0.3 V
–0.3 V
+0.6 V
–0.3 V
MBM29DL16XTE/BE
70
—
70
70
30
—
90
90
90
35
—
12
120
120
50
s
PACKAGES
48-pin plastic TSOP (I)
Marking Side
48-pin plastic TSOP (I)
48-pin plastic FBGA
Marking Side
(FPT-48P-M19)
(FPT-48P-M20)
(BGA-48P-M11)
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
