FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20881-3E
FLASH MEMORY
CMOS
32M (4M
×
8/2M
×
16) BIT
Dual Operation
MBM29DL32XTE/BE
-80/90/12
s
DESCRIPTION
The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M
words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V
V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The devices can also be
reprogrammed in standard EPROM programmers.
MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which can be considered to be two
separate memory arrays as far as certain operations are concerned. These devices are the same as Fujitsu’s
standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access
from a non-busy bank of the array while an embedded write (either a program or an erase) operation is
simultaneously taking place on the other bank.
(Continued)
s
PRODUCT LINE UP
Part No.
V
CC
= 3.3 V
Ordering Part No.
V
CC
= 3.0 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
+0.3 V
–0.3 V
+0.6 V
–0.3 V
MBM29DL32XTE/BE
80
—
80
80
30
—
90
90
90
35
—
12
120
120
50
s
PACKAGES
48-pin plastic TSOP (I)
Marking Side
48-pin plastic TSOP (I)
63-ball plastic FBGA
Marking Side
(FPT-48P-M19)
(FPT-48P-M20)
(BGA-63P-M01)
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
