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MBM29DL64DF70PBT 参数 Datasheet PDF下载

MBM29DL64DF70PBT图片预览
型号: MBM29DL64DF70PBT
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH存储器CMOS 64米(8米乘8/4米乘16 )位 [FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 68 页 / 793 K
品牌: FUJITSU [ FUJITSU COMPONENT LIMITED. ]
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FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20905-1E
FLASH MEMORY
CMOS
64 M (8 M
×
8/4 M
×
16) BIT
Dual Operation
MBM29DL64DF
-70
s
DESCRIPTION
MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16
bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be
programmed in system with 3.0 V V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations.
The device can also be reprogrammed in standard EPROM programmers.
The device is organized into four physical banks : Bank A, Bank B, Bank C and Bank D, which are considered to
be four separate memory arrays operations. This device is the almost identical to Fujitsu’s standard 3 V only Flash
memories, with the additional capability of allowing a normal non-delayed read access from a non-busy bank of
the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the
other bank.
(Continued)
s
PRODUCT LINE UP
Part No.
Power Supply Voltage V
CC
(V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
MBM29DL64DF-70
+0.6
V
3.0 V
−0.3
V
70
70
30
s
PACKAGES
48-pin plastic TSOP (1)
Marking Side
48-ball plastic FBGA
(FPT-48P-M19)
(BGA-48P-M13)