BLOCK DIAGRAM
(1) CMOS Output
(2) Nch Open Drain Output
V
IN
V
IN
V
OUT
+
-
Vref
+
-
Vref
V
OUT
V
SS
V
SS
ELECTRICAL CHARACTERISTICS
[V
DF
(T) = 1.6 to 6.0V ± 2%]
T
A
= 25°C
PARAMETER
Detect Voltage
Hysteresis Range
SYMBOL
V
DF
V
HYS
CONDITIONS
MIN
V
DF
X 0.98
TYP
V
DF
MAX
V
DF
X 1.02
UNIT
V
V
CIRCUIT
1
1
V
DF
X 0.02 V
DF
X 0.05 V
DF
X 0.08
V
IN
= 1.5V
V
IN
= 2.0V
0.7
0.8
0.9
1.0
1.1
0.7
2.3
2.7
3.0
3.2
3.6
10.0
Supply Current
I
SS
V
IN
= 3.0V
V
IN
= 4.0V
V
IN
= 5.0V
µA
2
Operating Voltage
V
IN
V
DF
(T) = 1.6V to 6.0V
Nch
V
DS
= 0.5V
V
IN
= 1.0V
V
IN
= 2.0V
V
IN
= 3.0V
V
1
1.0
3.0
5.0
6.0
7.0
2.2
7.7
3
10.1
11.5
13.0
-10.0
-2.0
4
mA
Output Current
I
OUT
V
IN
= 4.0V
V
IN
= 5.0V
Pch
V
DS
= 2.1V
V
IN
= 8.0V
(with CMOS output)
GM5510
Temperature
Characteristics
Delay Time
(V
DR
"V
OUT
inversion)
DV
DF
DTopr
-V
DF
t
DLY
-40°C
Topr
85°C
± 100
ppm/ °C
-
0.2
mS
5
2
Note:
V
DF
(T): Established Detect Voltage Value
Release Voltage: V
DR
=
V
DF
+ V
HYS
4
GAMMA [ GAMMA MICROELECTRONICS INC. ]
