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G2996P1UF 参数 Datasheet PDF下载

G2996P1UF图片预览
型号: G2996P1UF
PDF下载: 下载PDF文件 查看货源
内容描述: DDR I / II终端稳压器 [DDR I/II Termination Regulator]
分类和应用: 稳压器双倍数据速率
文件页数/大小: 13 页 / 282 K
品牌: GMT [ GLOBAL MIXED-MODE TECHNOLOGY INC ]
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Global Mixed-mode Technology Inc.  
G2996  
VDDQ  
PCB is strongly recommended to have a better ther-  
mal performance. The RDS of MOS will increase when  
the junction temperature increases. If the heat is not  
dealt with well, the maximum output current will be  
degraded. When the temperature exceeds the junction  
temperature, the thermal shutdown protection is acti-  
vated. That will drive the VTT output into tri-state until  
the temperature returns below the hysteretic trigger  
point.  
A voltage divider of two 50kΩ is connected between  
VDDQ and ground, to create the internal reference  
voltage (VDDQ/2). This guarantees that VTT will track  
VDDQ/2 precisely. The optimal implementation of  
VDDQ is as a remote sensing. This can be achieved  
by connecting VDDQ directly to the 2.5V rail (SSTL-2  
applications) at the DIMM instead of AVIN and PVIN.  
This will ensure that the reference voltage tracks the  
DDR memory rails precisely without a large voltage  
drop from the power lines.  
Capacitors  
The G2996 does not require the capacitors for input  
stability, but it is recommended for improving the per-  
formance during large load transition to prevent the  
input power rail from dropping, especially for PVIN.  
The input capacitor for PVIN should be as close as  
possible. The typical recommended value is 50µF for  
AL electrolytic capacitors, 10µF with X5R for the ce-  
ramic capacitors. To prevent the excessive noise cou-  
pling into this device, an additional 0.1µF ceramic ca-  
pacitor can be placed on the AVIN power rail for the  
better performance.  
Vsense  
The VSENSE pin is the feedback sensing pin of the op-  
eration amplifier which regulates the VTT voltage. In  
most motherboard applications, the termination resis-  
tors will connect VTT in a long plane. If using the re-  
mote sensing pin VSENSE to the middle of the bus, the  
significant long-trace IR drop resulting in a termination  
voltage which is lower at one end than the other can  
be avoided. This will provide a better distribution  
across the entire termination bus. If the remote load  
regulation is not used, the VSENSE pin must still be  
connected to VTT for correct regulation. Care should be  
taken when a long VSENSE trace is implemented in  
close proximity to the memory. Noise pickup in the  
VSENSE trace can cause problems with precise regula-  
tion of VTT. A small 0.1µF ceramic capacitor placed  
next to the VSENSE pin can help to filter any high fre-  
quency signals and preventing errors.  
The output capacitor of the G2996 is suggested to use  
the capacitors with low ESR. Using the capacitors with  
low ESR (as ceramic, OS-CON, tantalum) will have  
the better transition performance which is with smaller  
voltage drop when the peak current occurring at the  
transition. As a general recommendation the output  
capacitor should be sized above 220µF with the low  
ESR for SSTL applications with DDR-SDRAM.  
VREF  
Thermal Dissipation  
VREF provides a buffered output of the internal refer-  
ence voltage (VDDQ/2). It can support the reference  
voltage of Northbridge chipset and memory. This out-  
put remains active during the shutdown state and  
thermal shutdown events to support the suspend to  
RAM (STR) functionality. For better performance, us-  
ing an output bypass capacitor close this pin is more  
helpful for the noise. A ceramic capacitor in the range  
of 0.1µF to 0.01µF is recommended.  
When the current is sinking to or sourcing from VTT,  
the G2996 will generate internal power dissipation  
resulting in the heat. Care should be taken to prevent  
the device from damages caused by the junction tem-  
perature exceeding the maximum rating. The maxi-  
mum allowable internal temperature rise (TRMAX) can  
be calculated under the given maximum ambient  
temperature (TAMAX) of the application and the maxi-  
mum allowable junction temperature (TJMAX).  
VTT  
TRMAX= TJMAX - TAMAX  
VTT is the regulated output that is used to terminate the  
bus resistors of DDR-SDRAM. It can precisely track  
the VDDQ/2 voltage with the sinking and sourcing  
current capability. The G2996 is designed to deliver  
1.5A continuous current and peak current up to 3A  
with a fast transient response @ 2.5V supply rail. The  
maximum continuous current sourcing from VTT is a  
function of PVIN. Using a higher PVIN will increase the  
source current from VTT, but it also increase the inter-  
nal power dissipation and reduce the efficiency. Al-  
though the G2996 can deliver the larger current, care  
should be taken for the thermal dissipation when lar-  
ger current is required. The G2996 is packaged with  
Power-Pad to increase the power dissipation capability.  
When driving larger current, the larger heat-sink in the  
From this equation, the maximum power dissipation  
(PDMAX) of the G2996 can be calculated:  
PDMAX = TRMAX /θJA  
θJA of the G2996 will be dependent on several vari-  
ables: the packages used, the thickness and size of  
the copper, the number of vias and the airflow. In the  
package, the G2996 use the SOP-8 with Power-PAD  
to improve the θJA . If the layout of the PCB can put a  
larger size of copper to contact the Power-PAD of this  
device, the θJA will be further improved. The better θJA  
is not only protecting the device well, but also increas-  
ing the maximum current capability at the same ambi-  
ent temperature.  
Ver: 2.3  
May 16, 2006  
TEL: 886-3-5788833  
http://www.gmt.com.tw  
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