1N5711 and 1N6263
Small-Signal Diode
Schottky Diodes
Features
For general purpose applications
Metal-on-silicon Schottky barrier device which is protected by a
PN junction guard ring. The low forward voltage drop and fast
switching make it ideal for protection of MOS devices, steering,
biasing and coupling diodes for fast switching and low logic
level applications.
This diode is also available in the MiniMELF case with type
designation LL5711 and LL6263.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified.)
Parameter
Peak inverse voltage
Power dissipation (Infinite heatsink)
Maximum single cycle surge 10
u
s square wave
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1N5711
1N6263
Symbol
V
RRM
P
tot
I
FSM
R
θ
JA
T
j
T
S
Value
70
60
400
(1)
Unit
Volts
mW
Amps
o
2.0
0.3
125
(1)
C/mW
o
(1)
C
C
-55 to +150
(1)
o
Electrical Characteristics
(T
J
=25
o
C unless otherwise noted.)
Parameter
Reverse breakdown voltage
Leakage current
Forward voltage drop
Junction capacitance
Reverse recovery time
1N5711
1N6263
Symbol
V
(BR)R
I
R
V
F
C
tot
t
rr
Test Condition
I
R
=10
uA
V
R
=50V
I
F
=1mA
I
F
=15mA
V
R
=0V, f=1MHz
I
F
=I
R
=5mA,
recovery to 0.1I
R
Min.
70
60
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
Max.
-
-
200
0.41
1.0
2.2
1
Unit
Volts
nA
Volt
pF
ns
Notes:
1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
673
GOOD-ARK [ GOOD-ARK ELECTRONICS ]
