BAS86
Small-Signal Diode
Schottky Diode
Features
For general purpose applications.
This diode features low turn-on voltage. This device are
protected by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
Metal-on-silicon Schottky barrier device which is protected by a
PN junction guard ring.
The low forward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and coupling
diodes for fast switching and low logic level applications.
This diode is also available in the DO-35 case with type
designation BAT86.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
Cathode Band Color: Green
Maximum Ratings and Thermal Characteristics
(T
A
=25
o
C unless otherwise noted.)
Parameter
Continuous reverse voltage
Forward continuous current at T
amb
=25
o
C
Repetitive peak forward current
at tp<1s,
υ<
0.5, T
amb
=25
o
C
Power dissipation at T
amb
=25
o
C
Thermal resistance junction to ambient air
Junction temperature
Ambient operating temperature range
Storage temperature range
Symbol
V
R
I
F
I
FRM
P
tot
R
θ
JA
T
j
T
amb
T
S
Value
50
200
500
200
300
(1)
Unit
Volts
mA
mA
mW
o
(1)
(1)
(1)
C/W
o
125
-65 to +125
-65 to +150
C
C
C
o
o
Notes:
1. Valid provided that electrodes are kept at ambient temperature.
699