BAT86
Small-Signal Diode
Schottky Diode
Features
For general purpose applications.
This diode features low turn-on voltage. This device is
protected by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
Metal-on-silicon Schottky barrier device which is protected by a
PN junction guard ring. The low forward voltage drop and fast
switching make it ideal for protection of MOS devices, steering,
biasing and coupling diodes for fast switching and low logic
level applications.
This diode is also available in the MiniMELF case with type
designation BAS86.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified.)
Parameter
Continuous reverse voltage
Forward continuous current at T
amb
=25
o
C
Repetitive peak forward current
at t
p
<1s,
υ<
0.5, T
amb
=25
o
C
Power dissipation at T
amb
=25
o
C
Thermal resistance junction to ambient air
Junction temperature
Ambient operating temperature range
Storage temperature range
Symbol
V
R
I
F
I
FRM
P
tot
R
θ
JA
T
j
T
amb
T
S
Value
50
200
500
200
300
(1)
Unit
Volts
mA
mA
mW
o
(1)
(1)
(1)
C/W
o
125
-65 to +125
-65 to +150
C
C
C
o
o
Electrical Characteristics
(T
J
=25
o
C unless otherwise noted.)
Parameter
Reverse breakdown voltage
Leakage current
Symbol
V
(BR)R
I
R
Test Condition
I
R
=10
u
A (pulsed)
V
R
=40V
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=1V, f=1MHz
I
F
=10mA, I
R
=10mA,
to I
R
=1mA
Min.
50
-
-
-
-
-
-
-
-
Typ.
-
0.3
0.200
0.275
0.365
0.460
0.700
-
-
Max.
-
5.0
0.300
0.380
0.450
0.600
0.900
8
5
Unit
Volts
uA
Forward voltage
pulse test t
p
<300
u
s,
δ
<2%
V
F
Volt
Capacitance
Reverse recovery time
Notes:
C
tot
t
rr
pF
ns
1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
677
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