LL4448
SILICON EPITAXIAL PLANAR DIODE
Features
Silicon Epitaxial Planar Diode
fast switching diode in MiniMELF case especially suited for
automatic insertion.
Identical electrically to standard 1N4448
These diode are delivered taped.
Details see Taping.
Weight approx. : 0.05g
DIMENSIONS
DIM
A
B
C
inches
Min.
0.134
0.055
0.008
Max.
0.142
0.059
0.016
Min.
3.4
1.40
0.2
mm
Max.
3.6
1.50
0.4
Note
Absolute Maximum Ratings
(T
a
=25
)
Symbols
Values
Units
Reverse voltage
Peak reverse voltage
Rectified current (Average)
Half wave rectification with Resist. Load
at T
amb
=25 and f 50Hz
Surge forward current at t<1s and T
j
=25
Power dissipation at T
amb
=25
Junction Temperature
Storage temperature range
Note:
(1) Valid provided that electrodes are kept at ambient temperature
V
R
V
RM
I
O
I
FSM
P
tot
T
j
T
S
75
100
150
1)
Volts
Volts
mA
mA
mW
500
500
1)
175
-65 to +175
1
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