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GPDN1230 参数 Datasheet PDF下载

GPDN1230图片预览
型号: GPDN1230
PDF下载: 下载PDF文件 查看货源
内容描述: 整流器器二极管 [RECTIFIER DIODE]
分类和应用: 二极管
文件页数/大小: 2 页 / 412 K
品牌: GPSEMI [ GREEN POWER SOLUTIONS SRL ]
 浏览型号GPDN1230的Datasheet PDF文件第2页  
Green Power Solutions srl
Via Venezia 34D - 10088 Volpiano (TO), Italy
Phone: +39-011-988 2251
Fax: +39-011-988 1358
Web: www.gpsemi.it
E-mail: info@gpsemi.it
GPDN1230
RECTIFIER DIODE
VOLTAGE UP TO
AVERAGE CURRENT
SURGE CURRENT
BLOCKING CHARACTERISTICS
Characteristic
V
RRM
V
RSM
I
RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current, max.
V
RRM
, single phase, half wave, Tjmax
1000 V
2300 A
28 kA
Conditions
Value
1000 V
1100 V
50 mA
FORWARD CHARACTERISTICS
I
F(AV)
I
F(RMS)
I
FSM
I²t
V
F(TO)
Average forward current
R.M.S. forward current
Surge forward current
I² t for fusing coordination
Threshold voltage
Forward slope resistance
Peak forward voltage, max
T
j
= T
jmax
T
j
= T
jmax
Forward current I
F
= 4000 A, Tj = Tjmax
Sine wave,180° conduction, T h = 55°
C
Sine wave,180° conduction, Th = 55°
C
Non rep. half sine wave, 50 Hz, V
R
= 0 V, T
j
= T
jmax
2300 A
3613 A
28 kA
3920 kA²s
0.72 V
0.123 m
1.21 V
r
F
V
FM
SWITCHING CHARACTERISTICS
Q
rr
I
rr
Rverse recovery charge, typ
Reverse recovery current
T
j
= T
jmax
, I
F
= 1000 A, di/dt = -5 A/µs
µC
A
THERMAL AND MECHANICAL CHARACTERISTICS
R
th(j-h)
T
jmax
T
stg
F
Thermal resistance (junction to heatsink)
Max operating junction temperature
Storage temperature
Clamping force ± 10%
Mass
Double side cooled
0.037 °
C/W
175 °
C
-40 / 175 °
C
12 kN
300 g
Document GPDN1230T001