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GPTP2199 参数 Datasheet PDF下载

GPTP2199图片预览
型号: GPTP2199
PDF下载: 下载PDF文件 查看货源
内容描述: 相控可控硅 [PHASE CONTROLLED SCR]
分类和应用: 可控硅
文件页数/大小: 2 页 / 122 K
品牌: GPSEMI [ GREEN POWER SOLUTIONS SRL ]
 浏览型号GPTP2199的Datasheet PDF文件第2页  
Green Power Solutions srl
Via Greto di Cornigliano 6R - 16152 Genova , Italy
Phone: +39-010-659 1869
Fax: +39-010-659 1870
Web: www.gpsemi.it
E-mail: info@gpsemi.it
GPTP2199
PHASE CONTROLLED SCR
High reliability operation
DC power supply
AC drives
VOLTAGE UP TO
AVERAGE CURRENT
SURGE CURRENT
BLOCKING CHARACTERISTICS
Characteristic
V
RRM
V
RSM
V
DRM
I
DRM
I
RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Repetitive peak off-state current, max.
Repetitive peak reverse current, max.
V
DRM
, single phase, half wave, Tj = Tjmax
V
RRM
, single phase, half wave, Tj = Tjmax
1800 V
1990 A
36 kA
Conditions
Value
1800 V
1900 V
1800 V
70 mA
70 mA
ON-STATE CHARACTERISTICS
I
T(AV)
I
T(RMS)
I
TSM
I²t
V
T(TO)
Average on-state current
R.M.S. on-state current
Surge on-state current
I² t for fusing coordination
Threshold voltage
On-state slope resistance
Peak on-state voltage, max
Holding current, max
Latching current, typ
T
j
= T
jmax
T
j
= T
jmax
On-state current I
T
= 2900 A , Tj = 25 °C
T
j
= 25 °C
T
j
= 25 °C
Sine wave,180° conduction, Th = 55 °C
Sine wave,180° conduction, Th = 55 °C
Non rep. half sine wave, 50 Hz, V
R
= 0 V, T
j
= T
jmax
1990 A
3126 A
36 kA
6480 kA²s
0,80 V
0,178 m
1,40 V
300 mA
700 mA
r
T
V
TM
I
H
I
L
TRIGGERING CHARACTERISTICS
V
GT
I
GT
V
GD
P
GM
P
G(AV)
I
FGM
V
FGM
V
RGM
Gate trigger voltage
Gate trigger current
Non-trigger voltage
Peak gate power dissipation
Average gate power dissipation
Peak gate current
Peak gate voltage (forward)
Peak gate voltage (reverse)
T
j
= 25 °C, V
D
= 5 V
T
j
= 25 °C, V
D
= 5 V
V
D
= 67% V
RRM
, T
j
= T
jmax
Pulse width 100 µs
3,5 V
300 mA
0,25 V
150 W
2 W
10 A
30 V
5 V
SWITCHING CHARACTERISTICS
di/dt
dV/dt
t
q
Critical rate of rise of on-state current
Critical rate of rise of off-state voltage
Turn-off time, typ
T
j
= T
jmax
T
j
= T
jmax
T
j
= T
jmax
, I
T
= 1000 A, di/dt = -20 A/µs
VR = 50 V, VD = 67% VDRM, dV/dt = 20 V/µs
200 A/µs
500 V/µs
µs
THERMAL AND MECHANICAL CHARACTERISTICS
R
th(j-c)
R
th(c-h)
T
jmax
T
stg
F
Thermal resistance (junction to case)
Thermal resistance (case to heatsink)
Max operating junction temperature
Storage temperature
Clamping force ± 5%
Mass
Double side cooled
Double side cooled
0,015 °C/W
0,006 °C/W
125 °C
-40 / 125 °C
23 kN
520 g
Document GPTP2199T001