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GFC260 参数 Datasheet PDF下载

GFC260图片预览
型号: GFC260
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOSFET具有极低的RDS(on ) [N Channel Power MOSFET with extremely low RDS(ON)]
分类和应用:
文件页数/大小: 1 页 / 96 K
品牌: GSG [ GUNTER SENICONDUCTOR GMBH. ]
   
Gunter Semiconductor GmbH
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Extremely low R
DS(ON)
Mechanical Data:
D31
6.53mm x 9.15mm
Dimension
400
µ
m
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
25 mil Al
Source Bonding Wire:
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction
Storage Temperature
@Ta=25℃
GFC260
N Channel Power MOSFET with extremely low R
DS(ON)
Symbol
V(BR)DSS
RDS(ON)
ID@25℃
ID@100℃
Tj
Limit
Unit
Test Conditions
VGS=0V, ID=250µΑ
VGS=10V, ID=28Α
VGS=10V
VGS=10V
200
0.055
46
29
-55~150
-55~150
V
A
A
T
STR
Target Device: IRFP260
TO-247AC
P
D
280
W
@Tc=25℃