Gunter Semiconductor GmbH
N Channel Power MOSFET with low R
DS(on)
GFC340
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
℃
* Fast Switching
* Fully Avalanche Rated
* Low R
DS(on)
Mechanical Data:
D22
Dimension
4.32mm x 5.76mm
Thickness:
400
µ
m
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire:
12 mil Al
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction
Storage Temperature
@Ta=25℃
℃
Symbol
V(BR)DSS
RDS(ON)
ID@25
℃
ID@100
℃
Tj
Limit
Unit
Test Conditions
VGS=0V, ID=250
µΑ
VGS=10V, ID=5
Α
VGS=10V
VGS=10V
400
0.55
10
6.3
-55~175
-55~175
V
Ω
A
A
℃
℃
T
STR
Target Device: IRF740
TO-220AB
P
D
1.34
W
@Tc=25℃