Gunter Semiconductor GmbH
N Channel Power MOSFET with high V
DS
GFC460
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
℃
* Fast Switching
* Fully Avalanche Rated
Mechanical Data:
D31
6.53mm x 9.15mm
Dimension
400
µ
m
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire:
25mil Al
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction
Storage Temperature
@Ta=25℃
℃
Symbol
V(BR)DSS
RDS(ON)
ID@25℃
ID@100℃
Tj
Limit
Unit
Test Conditions
VGS=0V, ID=250µΑ
VGS=10V, ID=12Α
VGS=10V
VGS=10V
500
0.27
20
12
-55~150
-55~150
V
Ω
A
A
℃
℃
T
STR
Target Device: IRFP460
TO-247AC
P
D
280
W
@Tc=25℃
GSG [ GUNTER SENICONDUCTOR GMBH. ]
