Gunter Semiconductor GmbH
P Channel Power MOSFET
GFC9014
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
℃
* Fast Switching
* Fully Avalanche Rated
Mechanical Data:
D32
Dimension
1.92mm x 2.18mm
Thickness:
400
µ
m
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire:
5 mil Al
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction Temperatre
Storage Temperature
@Ta=25℃
℃
Symbol
-V(BR)DSS
RDS(ON)
--
ID@25
℃
-
-
ID@100
℃
Tj
Limit
Unit
Test Conditions
−
VGS=0V, -ID=250
µΑ
−
VGS=10V, - ID=3.1A
- VGS=10V
- VGS=10V
60
0.5
5.1
3.2
-55~150
-55~150
V
Ω
A
A
℃
℃
T
STR
Target Device: IRFR9014
TO-252AA
P
D
25
W
@Tc=25℃
GSG [ GUNTER SENICONDUCTOR GMBH. ]
