欢迎访问ic37.com |
会员登录 免费注册
发布采购

GFC9130 参数 Datasheet PDF下载

GFC9130图片预览
型号: GFC9130
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道功率MOSFET [P Channel Power MOSFET]
分类和应用:
文件页数/大小: 1 页 / 110 K
品牌: GSG [ GUNTER SENICONDUCTOR GMBH. ]
   
Gunter Semiconductor GmbH
P Channel Power MOSFET
GFC9130
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 175℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
Mechanical Data:
D39
2.88mm x 4.57mm
Dimension
400
µ
m
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
10 mil Al
Source Bonding Wire:
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction Temperatre
Storage Temperature
@Ta=25℃
Symbol
-V(BR)DSS
RDS(ON)
--ID@25℃
--ID@100℃
Tj
Limit
Unit
Test Conditions
VGS=0V, -ID=250µΑ
VGS=10V, - ID=7.2Α
- VGS=10V
- VGS=10V
100
0.3
12
8.2
-55~175
-55~175
V
A
A
T
STR
Target Device: IRF9530
TO-220AB
P
D
88
W
@Tc=25℃