Gunter Semiconductor GmbH
P Channel Power MOSFET
GFC9240
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
℃
* Fast Switching
* Fully Avalanche Rated
Mechanical Data:
D42
4.11mm x 5.56mm
Dimension
400
µ
m
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
15 mil Al
Source Bonding Wire:
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction Temperatre
Storage Temperature
@Ta=25℃
℃
Symbol
-V(BR)DSS
RDS(ON)
--ID@25℃
--ID@100℃
Tj
Limit
Unit
Test Conditions
−
VGS=0V, -ID=250µΑ
−
VGS=10V, - ID=5.5Α
- VGS=10V
- VGS=10V
200
0.5
11
6.8
-55~150
-55~150
V
Ω
A
A
℃
℃
T
STR
Target Device: IRF9640
TO-220AB
P
D
125
W
@Tc=25℃