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GFCF20 参数 Datasheet PDF下载

GFCF20图片预览
型号: GFCF20
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOSFET [N Channel Power MOSFET]
分类和应用:
文件页数/大小: 1 页 / 93 K
品牌: GSG [ GUNTER SENICONDUCTOR GMBH. ]
   
Gunter Semiconductor GmbH
N Channel Power MOSFET
GFCF20
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
Mechanical Data:
D11
Dimension
3.56mm x 3.63mm
480
µ
m
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire:
5 mil Al
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction
Storage Temperature
@Ta=25℃
Symbol
V(BR)DSS
RDS(ON)
ID@25℃
ID@100℃
Tj
Limit
Unit
Test Conditions
VGS=0V, ID=250µΑ
VGS=10V, ID=1Α
VGS=10V
VGS=10V
900
8
1.7
1.1
-55~150
-55~150
V
A
A
T
STR
Target Device: IRFBF20
TO-220AB
P
D
54
W
@Tc=25℃