Gunter Semiconductor GmbH
N Channel High voltage, Power MOSFET
GFCG20
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
℃
* Fast Switching
* Fully Avalanche Rated
* High breakdown voltage
Mechanical Data:
D11
Dimension
3.56mm x 3.63mm
Thickness:
480
µ
m
Metallization:
Top :
:
Al
Backside :
CrNiAg / Au
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire:
5 mil Al
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction
Storage Temperature
@Ta=25℃
℃
Symbol
V(BR)DSS
RDS(ON)
ID@25
℃
ID@100
℃
Tj
Limit
Unit
Test Conditions
VGS=0V, ID=250
µΑ
VGS=10V, ID=0.84
Α
VGS=10V
VGS=10V
1000
11.5
1.4
0.86
-55~150
-55~150
V
Ω
A
A
℃
℃
T
STR
Target Device: IRFBG20
TO-220AB
P
D
54
W
@Tc=25℃
GSG [ GUNTER SENICONDUCTOR GMBH. ]
