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GFCG40 参数 Datasheet PDF下载

GFCG40图片预览
型号: GFCG40
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道高电压功率MOSFET [N Channel High voltage, Power MOSFET]
分类和应用:
文件页数/大小: 1 页 / 107 K
品牌: GSG [ GUNTER SENICONDUCTOR GMBH. ]
   
Gunter Semiconductor GmbH
N Channel High voltage, Power MOSFET
GFCG40
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* High breakdown voltage
Mechanical Data:
D23
Dimension
5.64mm x 5.64mm
480
µ
m
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
10 mil Al
Source Bonding Wire:
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target packag
Continuous Drain current ( in target packag
Operation Junction
Storage Temperature
@Ta=25℃
Symbol
V(BR)DSS
RDS(ON)
ID@25℃
ID@100℃
Tj
Limit
Unit
Test Conditions
V
GS
=0V, I
D
=250µΑ
V
GS
=10V, I
D
=2.6Α
VGS=10V
VGS=10V
1000
3.5
4.3
2.7
V
A
A
-55~150
-55~150
T
STR
Target Device: IRFG40
TO-247AC
Pd
150 W
@Tc=25℃