Gunter Semiconductor GmbH
N Channel High voltage, Power MOSFET
GFCG40
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
℃
* Fast Switching
* Fully Avalanche Rated
* High breakdown voltage
Mechanical Data:
D23
Dimension
5.64mm x 5.64mm
480
µ
m
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
10 mil Al
Source Bonding Wire:
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target packag
Continuous Drain current ( in target packag
Operation Junction
Storage Temperature
@Ta=25℃
℃
Symbol
V(BR)DSS
RDS(ON)
ID@25℃
ID@100℃
Tj
Limit
Unit
Test Conditions
V
GS
=0V, I
D
=250µΑ
V
GS
=10V, I
D
=2.6Α
VGS=10V
VGS=10V
1000
3.5
4.3
2.7
V
Ω
A
A
-55~150
℃
-55~150
℃
T
STR
Target Device: IRFG40
TO-247AC
Pd
150 W
@Tc=25℃