Gunter Semiconductor GmbH
N Channel Power MOSFET FOR LOGIC DRIVER
GLC130
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dv/dt Rating
* 175℃ Operating Temperature
℃
* Fast Switching
* Fully Avalanche Rated
* R
DS(ON) rated at VGS = 5V
* Ease of parallel
Mechanical Data:
D13
Dimension
2.68mm x 3.75mm
400
µ
m
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire:
10 mil Al
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction Temperature
Storage Temperature
@Ta=25℃
℃
Symbol
V(BR)DSS
RDS(ON)
ID@25℃
ID@100℃
Tj
Limit
Unit
Test Conditions
VGS=0V, ID=250µΑ
VGS=5V, ID=9Α
VGS= 5V
VGS= 5V
100
0.16
15
11
-55~175
-55~175
V
Ω
A
A
℃
℃
T
STR
Target Device: IRL530
TO-220AB
P
D
88
W
@Tc=25℃
GSG [ GUNTER SENICONDUCTOR GMBH. ]
